We use a broad range of x‑ray‑based methods, such as x‑ray diffraction, x‑ray scattering and x‑ray spectroscopy for the study of various types of nanostructures. In the last decade we have dealt with semiconductor and metallic nanoparticles and quantum dots in single‑crystalline and amorphous matrices. We have investigated the structure of these objects by x‑ray diffraction, small‑angle x‑ray scattering, and x‑ray absorption spectroscopy (methods EXAFS and XANES). We are also studying defects in semiconductor epitaxial layers by reciprocal‑space mapping method and by numerical simulations based on the Monte‑Carlo approach.
Quite recently we have started a study of the structure of new materials, like antiferromagnetic semiconductor layers and topological insulators. We perform the experiments in the x‑ray lab of the Department of Condensed Matter physics, however we are frequently using various synchrotron sources – ESRF (Grenoble), ANKA (Karlsruhe) and ELETTRA (Trieste).
J. Růžička, O. Caha, V. Holý, H. Steiner, V. Volobuiev, A. Ney, G. Bauer, T. Duchoň, K. Veltruská, I. Khalakhan, V. Matolín, E. F. Schwier, H. Iwasawa, K. Shimada, and G. Springholz: Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. New J. Phys. 17, 013028 (2015).
J. Šmilauerová, P. Harcuba, J. Stráský, J. Stráská, M. Janeček, J. Pospíšil, R. Kužel, T. Brunátová, V. Holý, and J. Ilavský: Ordered array of omega particles in beta-Ti matrix studied by small-angle X-ray scattering. Acta Mater. 81, 71-82 (2014).
M. Barchuk, V. Holý, D. Kriegner, J. Stangl, S. Schwaiger, and F. Scholz: Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxial layers. Phys. Rev. B 84, 094113 (2011).